EMS1 / ums1n / fms1a transistors emitter common (dual digital transistors) EMS1 / ums1n / fms1a z z z z features 1) two 2sa1037ak chips in a emt or umt or smt package. 2) mounting cost and area can be cut in half. z z z z structure epitaxial planar type pnp silicon transistor the following characteristics apply to both tr 1 and tr 2. z z z z equivalent circuit EMS1 / ums1n fms1a r 1 tr 1 tr 2 (3) (4) (5) (2) (1) tr 1 tr 2 (3) (2) (1) (4) (5) z z z z absolute maximum ratings (ta = 25 c) parameter symbol limits unit v cbo ? 60 v ? 50 v v v ceo v ebo ? 6 i c ma 150 tj 150 ?c tstg ? 55 + 150 ?c p c EMS1, ums1n 150 (total) mw fms1a 300 (total) ? 1 ? 2 collector-base voltage collector-emitter voltage emitter-base voltage collector current junction temperature storage temperature collector power dissipation ? 1 120mw per element must not be exceeded. ? 2 200mw per element must not be exceeded. z z z z external dimensions (units : mm) rohm : emt5 EMS1 rohm : umt5 eiaj : sc-88a ums1n each lead has same dimensions each lead has same dimensions each lead has same dimensions 0to0.1 1.1 0.8 0.3to0.6 0.15 1.6 2.8 2.9 0.95 1.9 ( 4 ) ( 5 ) ( 1 ) 0.3 ( 3 ) 0.95 ( 2 ) abbreviated symbol : s1 abbreviated symbol : s1 abbreviated symbol : s1 rohm : smt5 eiaj : sc-74a fms1a 0.22 1.2 1.6 ( 1 ) ( 2 ) ( 3 ) ( 5 ) ( 4 ) 0.13 0.5 0.5 0.5 1.0 1.6 0.9 0.15 0to0.1 0.1min. 0.7 2.1 1.3 0.65 2.0 ( 4 ) ( 1 ) ( 5 ) 0.2 1.25 ( 2 ) 0.65 ( 3 )
EMS1 / ums1n / fms1a transistors z z z z electrical characteristics (ta = 25 c) parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce (sat) cob min. ? 60 ? 50 ? 6 ? ? 120 ? ? ? ? ? ? ? ? ? 3 ? ? ? ? 0.1 ? 0.1 560 ? 0.5 4.5 vi c = ? 50 a i c = ? 1ma i e = ? 50 a v cb = ? 60v v eb = ? 5v v ce = ? 6v, i c = ? 1ma i c /i b = ? 50ma/ ? 5ma v v a a ? v pf typ. max. unit conditions f t ? 140 ? v ce = ? 12v, i e = 2ma, f = 100mhz v cb = ? 12v, i e = 0a, f = 1mhz mhz collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio transition frequency collector-emitter saturation voltage output capacitance z z z z packaging specifications package code tr t148 3000 3000 taping basic ordering unit (pieces) ums1n t2r 8000 EMS1 fms1a type z z z z electrical characteristic curves ? 0.2 collector current : ic ( ma) ? 50 ? 20 ? 10 ? 5 ? 2 ? 1 ? 0.5 ? 0.2 ? 0.1 ? 0.4 ? 0.6 ? 0.8 ? 1.0 ? 1.2 ? 1.4 ? 1.6 v ce = ? 6v base to emitter voltage : v be (v) fig.1 grounded emitter propagation characteristics ta=100 ? c 25 ? c ? 40 ? c ? 0.4 ? 4 ? 8 ? 1.2 0 ? 2 ? 6 ? 10 ? 0.8 ? 1.6 ? 2.0 ? 3.5 a ? 7.0 ? 10.5 ? 14.0 ? 17.5 ? 21.0 ? 24.5 ? 28.0 ? 31.5 i b =0 ta=25 ? c ? 35.0 collector current : i c (ma) collector to emitter voltage : v ce (v) fig.2 grounded emitter output characteristics ( i ) ? 40 ? 80 ? 5 ? 3 ? 4 ? 2 ? 1 ? 20 ? 60 ? 100 0 i b =0 ta=25 ? c collector current : i c (ma) collector to emitter voltage : v ce (v) fig.3 grounded emitter output characteristics ( ii ) ? 50 a ? 100 ? 150 ? 200 ? 250 ? 500 ? 450 ? 400 ? 350 ? 300
EMS1 / ums1n / fms1a transistors 500 200 100 50 ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 dc current gain : h fe ta=25 ? c v ce = ? 5v ? 3v ? 1v collector current : i c (ma) fig.4 dc current gain vs. collector current ( i ) 500 200 100 50 ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 dc current gain : h fe collector current : i c (ma) v ce = ? 6v fig.5 dc current gain vs. collector current ( ii ) ta=100 ? c ? 40 ? c 25 ? c ? 0.1 ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 ? 1 ? 0.5 ? 0.2 ? 0.05 ta=25 ? c collector saturation voltage : v ce (sat) (v) collector current : i c (ma) i c /i b =50 20 10 fig.6 collector-emitter saturation voltage vs. collector current ( i ) ? 0.1 ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 ? 1 ? 0.5 ? 0.2 ? 0.05 collector saturation voltage : v ce (sat) (v) collector current : i c (ma) l c /l b =10 fig.7 collector-emitter saturation voltage vs. collector current ( ii ) ta=100 ? c 25 ? c ? 40 ? c 50 100 0.5 20 50 100 200 500 1000 12 510 emitter current : i e (ma) transition frequency : f t (mhz) ta=25 ? c v ce = ? 12v fig.8 gain bandwidth product vs. emitter current collector to base voltage : v cb (v) emitter to base voltage : v eb (v) collector output capacitance : cob (pf) emitter input capacitance : cib ( pf) fig.9 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage ? 0.5 ? 20 2 5 10 ? 1 ? 2 ? 5 ? 10 20 cib cob ta=25 ? c f = 1mhz i e =0a i c =0a
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